MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K

Dimensions

1N5802, 1N5804, 1N5806

1N5807, 1N5809, 1N5811

Ltr.

Inches

Millimeters

Inches

Millimeters

Notes

Min

Max

Min

Max

Min

Max

Min

Max

.065 .085

1.65

2.16

.115

.142

2.92

3.61

.125 .250

3.18

6.35

.130

.300

3.30

7.62

.027 .032

0.69

0.81

.036

.042

0.91

1.07

.700 1.30

17.78

33.02

.900

1.30

22.86 33.02

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension BL shall include the entire body including slugs and sections of the lead over which

the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of

the diode body and extending .050 inch (1.27 mm) onto the leads.

4. Dimension BD shall be measured at the largest diameter.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions.