For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


img
. .
MIL-PRF-19500/477K
TABLE I. Group A inspection - Continued.
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 3 - continued
Duty cycle ≤ 2 percent (pulsed
Forward voltage
4011
see 4.5.1); tp = 8.3 ms (max)
1N5802, US, URS,
0.800
V
IFM = 1.0 A
VFM6
1N5804, US, URS,
1N5806, US, URS
1N5807, US, URS,
0.800
V
IFM = 4.0 A
VFM7
1N5809, US, URS,
1N5811, US, URS
TA = -65°C minimum.
Low-temperature
operation:
Duty cycle ≤ 2 percent (pulsed
Forward voltage
4011
VFM8
see 4.5.1); tp = 8.3 ms (max)
1N5802, US, URS,
1.075
V
IFM = 1.0 A
1N5804, US, URS,
1N5806, US, URS
1N5807, US, URS,
1.075
V
IFM = 4.0 A
1N5809, US, URS,
1N5811, US, URS
I(BR) = 100 µA dc
Breakdown voltage
4021
V(BR)2
1N5802, US, URS,
50
V dc
1N5807, US, URS
1N5804, US, URS,
100
V dc
1N5809, US, URS
1N5806, US, URS,
150
V dc
1N5811, US, URS
See footnotes at end of table.
15



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.