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MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K

TABLE I. Group A inspection - Continued.

Inspection

MIL-STD-750

Limit

Unit

Symbol

Method

Conditions

Min

Max

Subgroup 2 - continued

Reverse current

4016

DC or equivalent pulse method

IR1

�A

1N5802, US, URS

1.0

VR = 50 V

�A

1N5804, US, URS

1.0

VR = 100 V

�A

1N5806, US, URS

1.0

VR = 150 V

�A

1N5807, US, URS

5.0

VR = 50 V

�A

1N5809, US, URS

5.0

VR = 100 V

�A

1N5811, US, URS

5.0

VR = 150 V

I(BR) = 100 �A pulse ≤20 ms

Breakdown voltage

4021

V(BR)1

1N5802, US, URS,

1N5807, US, URS

1N5804, US, URS,

110

1N5809, US, URS

1N5806, US, URS,

160

1N5811, US, URS

Subgroup 3

TA = +125�C minimum.

High temperature

operation:

Reverse current

4016

DC or equivalent pulse method

IR2

�A

1N5802, US, URS

175

VR = 50 V

�A

1N5804, US, URS

175

VR = 100 V

�A

1N5806, US, URS

175

VR = 150 V

�A

1N5807, US, URS

525

VR = 50 V

�A

1N5809, US, URS

525

VR = 100 V

�A

1N5811, US, URS

525

VR = 150 V

See footnotes at end of table.