MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein. The ZθJX end-point shall be derived by the supplier and approved by the qualifying activity. This ZθJX end-

point shall also be documented in the qualification report.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of

MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2

herein. See table III herein for delta limits when applicable.

4.4.2.1 Group B inspection, appendix E, table VIA (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

4066

IFSM = rated IFSM (see col. 5 of 1.3.2); ten surges of 8.3 ms each at 1

minute intervals, superimposed on IO1 (See col. 4 of 1.3.2), VRWM = rated,

see col. 2 of 1.3.2. TA=25�C.

1037

IO = IO1 rated minimum (see 1.3.2); VR = rated VRWM (see 1.3.2 and 4.5.3

and 4.5.3.1); 2,000 cycles.

1027

IO = IO1 rated minimum (see col. 4 of 1.3.2); apply VR = rated VRWM (see col. 2

of 1.3.2, and 4.5.3 and 4.5.3.1) adjust IO to achieve TJ = 175�C minimum; n =

45, c = 0; t = 1,000 hours; f = 50 - 60 Hz. TA = 55�C max. For irradiated

devices, include trr as an end-point measurement.

Peak reverse power: For 1N5802 - 1N5806, PRM ≥ 318 W for square wave

4065

in accordance with TM 4065 (PRM ≥ 500 W for half sine-wave). For 1N5807

- 1N5811, PRM ≥ 636 W for square wave in accordance with TM 4065

(PRM ≥ 1,000 W for half sine-wave). Test shall be performed on each sublot;

sampling plan: n = 10, c = 0, electrical end-points, see table I, subgroup 2

herein.

4.4.2.2 Group B inspection, appendix E, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500).

Subgroup

Method

Condition

IO = IO1 rated minimum (see col. 4 of 1.3.2); adjust IO to achieve TJ = 150�C

1027

minimum, apply VR = rated VRWM (see col. 2 of 1.3.2), f = 50 - 60 Hz (see

4.5.3 and 4.5.3.1). TA = 55�C (max). For irradiated devices, include trr as an

end-point measurement.