MIL-PRF-19500-495 Semiconductor Device, Unitized, Dual-Transistor, Npn, Silicon Types 2N5793, 2N5794, And 2N5793A, 2N5794A, 2N5794U, 2N5794Uc, 2N5794Au, 2N5794Auc, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshScope. This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon transistors in one package. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/495G

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the test and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance with table I,

subgroup 2 herein.

4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E, (not applicable for U and UC devices).

RθJA only, as applicable (see 1.3) and in accordance with thermal impedance curves.

3131

1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150�C minimum and

1026

a minimum of PD = 75 percent of maximum rated PT as defined in 1.3 n = 45, c = 0. The

sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours.

4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E; (not applicable for U and UC devices).

RθJA only, as applicable (see 1.3) and in accordance with thermal impedance curves.

3131

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.