MIL-PRF-19500-495 Semiconductor Device, Unitized, Dual-Transistor, Npn, Silicon Types 2N5793, 2N5794, And 2N5793A, 2N5794A, 2N5794U, 2N5794Uc, 2N5794Au, 2N5794Auc, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshScope. This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon transistors in one package. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/495G

4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500

and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that

exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance method 3131 of

MIL-STD-750 (see 4.3.2)

ICBO2 and hFE4

Not applicable

ICBO2 and hFE4

Subgroup 2 of table I herein;

ĆICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater.

ĆhFE4 = �15 percent of initial value

See 4.3.1

Subgroup 2 of table I herein;

ĆICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater.

ĆhFE4 = �15 percent of initial value

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence

is required. In addition, the manufacturing site s burn-in data and performance history will be essential criteria for

burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where

appropriate). Measurement delay time (tMD) = 70 �s max. See table III, group E, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of subgroup 1 and 2, of table I herein, inspection only (table

E-VIb, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is

performed in table I herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.