INCHPOUND
MILPRF19500/539F
The documentation and process conversion
30 December 2012
measures necessary to comply with this revision
SUPERSEDING
shall be completed by 30 March 2013.
MILPRF19500/539E
22 August 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON,
TYPES 2N6300 AND 2N6301, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power Darlington transistors.
Three levels of product assurance are provided for each device type as specified in MILPRF19500.
1.2 Physical dimensions. The device package style is TO213AA (formerly TO66) in accordance with figure 1.
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
PT (1)
VCBO
VCEO
VEBO
IC
IB
TJ and TSTG
RθJC
Types
TC = 0°C
TC = 100°C
(2)
°C
W
W
W
°C/W
V dc
V dc
V dc
A dc mA dc
2N6300
75
65
37
2.66
60
60
5
8
120
55 to +200
2N6301
75
65
37
2.66
80
80
5
8
120
55 to +200
(1) See figure 2 for temperature-power derating curves.
(2) See figure 3 for thermal impedance curve.
Comments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN:
VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business