MIL-PRF-19500-539 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6300 And 2N6301, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/539F

TABLE II. Group E inspection (all quality levels) � for qualification and re-qualification only.

MIL�STD�750

Qualification

Inspection

sample plan

Method

Conditions

Subgroup 1

45 devices; c = 0

Temperature cycling

1051

500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices; c = 0

Test temperature = +125�C; VCB = 80

Blocking life

1048

percent rated; T = 1,000 hours.

Electrical measurements

See table I, subgroup 2 herein.

Sample size N/A

Subgroup 4

Thermal impedance curves

See MIL�PRF�19500.

Subgroup 5

3 devices; c = 0

Barometric pressure

1001

Test condition C. See 1.3.

(reduced)

Subgroup 6

11 devices

Electrostatic discharge

1020

sensitivity classification

Subgroup 8

45 devices; c = 0

Reverse voltage leakage

1033

Condition B for all device types.

stability