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MIL-PRF-19500-539 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6300 And 2N6301, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/539F

TABLE I. Group A inspection � Continued.

MIL�STD�750

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 5 � Continued

Test 2

VCE = 20 V dc; IC = 2.0 A dc

All device types

Test 3

VCE = 60 V dc; IC = 100 mA dc

2N6300

VCE = 80 V dc; IC = 100 mA dc

2N6301

Safe operating area

3053

Load condition B, (clamped

inductive load), TA = +25�C,

(switching)

tr + tf ≤ 1.0 �s duty cycle ≤ 10%,

tp = 1 ms (vary to obtain IC),

Rs = 0.1 ohms, RBB1 = 80 ohms,

VBB1 = 16 V dc, RBB2 = 100 ohms,

VBB2 = 1.5 V dc, VCC = 50 V dc,

IC = 8 A dc, RL ≤ 2 ohms,

L = 1 mH

2N6300

Clamp voltage = 60 V dc

2N6301

Clamp voltage = 80 V dc

Safe operating area

3053

Load condition C, (unclamped

(switching)

inductive load) (see figure 7),

TA = +25�C, duty cycle ≤ 10%,

Rs ≤ 0.1 ohms

tp = 1 ms (vary to obtain IC),

Test 1

RBB1 = 80 ohms, VBB1 ≥ 12 V dc,

RBB2 = ∞, VCC ≥ 30 V dc,

IC = 8 A dc, RL ≤ 0.5 ohms,

L = 1 mH at 8 A dc

tp = 1 ms (vary to obtain IC),

Test 2

RBB1 = 80 ohms, VBB1 ≥ 12 V dc,

RBB2 = ∞, VBB2 = 0 V dc,

VCC ≥ 30 V dc, IC = 0.2 A dc,

RL ≤ 0.5 ohms,

L = 100 mH at 0.2 A dc

Electrical measurements

See subgroup 2 of this table

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL�PRF�19500.

This test required for the following end-point measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroups 2 and 6.

Group E, subgroups 1 and 2.