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MIL-PRF-19500-539 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6300 And 2N6301, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/539F

TABLE I. Group A inspection � Continued.

MIL�STD�750

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 3

TA = +150�C

High-temperature operation:

Bias condition A; VBE = �1.5 V dc

Collector to emitter cutoff

3041

ICEX2

current

VCE = 60 V dc

2N6300

1.0

mA dc

VCE = 80 V dc

2N6301

1.0

mA dc

TA = �55�C

Low-temperature operation:

VCE = 3 V dc IC = 4 A dc;

hFE4

Forward-current transfer

3076

200

ratio

pulsed (see 4.5.1)

Subgroup 4

VCE = 3 V dc; IC = 3 A dc;

hfe

Small-signal, short-circuit

3206

300

forward-current

f = 1 kHz

transfer ratio

|hfe|

VCE = 3 V dc; IC = 3 A dc;

Magnitude of small-signal,

3306

350

short-circuit forward-

f = 1.0 MHz

current transfer ratio

Pulse response

3251

Test condition A, except test

transfer ratio

circuit and pulse requirements in

accordance with figures 4 and 5

herein

�s

VCC = 30 V dc, (see figure 4),

ton

Turn-on time

2.0

IC = 4 A dc, IB1 = 16 mA dc

�s

VCC = 30 V dc, (see figure 5),

toff

Turn-off time

8.0

IC = 4 A dc, IB1 = � IB2 = 16 mA dc

VCB = 10 V dc; IE = 0,

Open-circuit output

3236

200

Cobo

100 kHz ≤ f ≤ 1 MHz

capacitance

Subgroup 5

TC = +25�C +10�C, t = 1s, 1 cycle

Safe operating area

3051

(continuous dc)

(see figure 6)

Test 1

VCE = 8.0 V dc; IC = 8 A dc

All device types

See footnotes at end of table.