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MIL-PRF-19500-539 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6300 And 2N6301, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL–PRF–19500.

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MIL­PRF­19500/539F
TABLE I. Group A inspection.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance 2/
3131
See 4.3.1
°C/W
ZθJX
Bias condition D, IC = 100 mA dc;
V(BR)CEO
Breakdown voltage,
3011
collector to emitter
pulsed (see 4.5.1)
2N6300
60
V dc
2N6301
80
V dc
Bias condition A, VBE = ­1.5 V dc
ICEX1
Collector to emitter
3041
cutoff current
µA dc
VCE = 60 V dc
2N6300
10
µA dc
VCE = 80 V dc
2N6301
10
ICEO
Collector to emitter
3041
Bias condition D
cutoff current
VCE = 30 V dc
2N6300
0.5
mA dc
2N6301
VCE = 40 V dc
0.5
mA dc
Bias condition D, VEB = 5 V dc
IEBO
Emitter to base cutoff current
3061
2.0
mA dc
VCE = 3 V dc; IC = 1 A dc;
hFE1
Forward-current transfer ratio
3076
500
pulsed (see 4.5.1)
VCE = 3 V dc; IC = 4 A dc;
hFE2
Forward-current transfer ratio
3076
750
18000
pulsed (see 4.5.1)
VCE = 3 V dc; IC = 8 A dc;
Forward-current transfer ratio
3076
100
hFE3
pulsed (see 4.5.1)
Test condition B; VCE = 3 V dc;
VBE(SAT)1
Base emitter voltage
3066
2.8
V dc
IC = 4 A dc; pulsed (see 4.5.1);
(nonsaturated)
Test condition A; IC = 8 A dc;
VBE(SAT)2
Base emitter voltage
3066
4.0
V dc
IB = 80 mA dc; pulsed (see 4.5.1);
(saturated)
IC = 4 A dc; IB = 16 mA dc;
VCE(SAT)1
Saturation voltage;
3071
2.0
V dc
collector to emitter
pulsed (see 4.5.1)
IC = 8 A dc; IB = 80 m A dc;
VCE(SAT)2
Saturation voltage;
3071
3.0
V dc
collector to emitter
pulsed (see 4.5.1)
See footnotes at end of table.
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