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MIL-PRF-19500-539 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6300 And 2N6301, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, power Darlington transistors. Three levels of product assurance are provided for each device type as specified in MIL–PRF–19500.

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MIL­PRF­19500/539F
Temperature-Power Derating Curve
2N6300, 2N6301
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
225
DC Operattiion
DC Opera on
TC (ºC)) ((Casse)
Tc (°C  Ca e)
TheermalrRsisitstnce euncnictnototcaCe se 2.6.6°C//W
Th
rmal e e s a anc j Ju t oi n o s  a = = 2 6ºC W
NoNe:teMaxxfiniinish-Aly yeTep = +175.°CC
t o  : Ma F sh allolot m mp = 175 0º
NOTES:
1.  All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will
intersect the appropriate power for the desired maximum TJ allowed.
2.  Derate design curve constrained by the maximum junction temperature (TJ ≤ +200°C) and power rating
specified (see 1.3 herein.)
3.  Derate design curve chosen at TJ ≤ +150°C where the maximum temperature of electrical test is
performed.
4.  Derate design curves chosen at TJ ≤ +125°C and +110°C to show power rating where most users want to
limit TJ in their application.
FIGURE 2. Temperature-power derating graph for device types 2N6300 and 2N6301.
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