INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MIL-PRF-19500/543N
shall be completed by 29 April 2013.
29 March 2013
SUPERSEDING
MIL-PRF-19500/543M
22 September 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON
REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1,
2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,
MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy
ratings (EAS and EAR) and maximum avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768
and 2N6770 (formerly TO-3)), see figure 2 (TO-254AA for types 2N6764T1, 2N6766T1; 2N6768T1, and 2N6770T1),
(TA = +25°C, unless otherwise specified).
1.3 Maximum ratings.
RθJC
Type
PT (1)
PT
VDS
VDG
VGS
ID1 (3) (4)
IS
ID2 (3) (4)
TC = +25°C
TA = +25°C
TC = +25°C
TC = +100°C
(2)
°C/W
W
W
V dc
V dc
V dc
A dc
A dc
A dc
2N6764, 2N6764T1
150
4
100
100
±20
38.0
38.0
24.0
0.83
2N6766, 2N6766T1
150
4
200
200
±20
30.0
30.0
19.0
0.83
2N6768, 2N6768T1
150
4
400
400
±20
14.0
14.0
9.0
0.83
2N6770, 2N6770T1
150
4
500
500
±20
12.0
12.0
7.75
0.83
See notes on next page.
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ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
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