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MIL-PRF-19500-543 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/543N
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC shall be in accordance with appendix G
of MIL-PRF-19500. As a minimum, die shall be 100 percent probed in accordance with table I, subgroup 2 except
test current shall not exceed 20 A.
4.3.2 Gate stress test. Apply VGS = 30 V minimum for t = 250 µs minimum.
4.3.3 Single pulsed unclamped inductive switching.
a. Peak current ....................................ID1.
b. Peak gate voltage, VGS .....................10 V.
c. Gate to source resistor, RGS..............25 ≤ Rg ≤ 200 ohms.
d. Initial case temperature ....................+25°C, +10°C, -5°C.
(VBR -VDD )  
2E  
mH minimum.
AS
(I  D1 )
e. Inductance, L ....................................
2
 VBR
f. Number of pulses to be applied .........1 pulse minimum.
g. Supply voltage (VDD).........................50 V, (25 V for devices with minimum V(BR)DSS of 100 V).
4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with
method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
*
4.3.5 Dielectric withstanding voltage.
a.
Magnitude of test voltage.......................................900 V dc.
b.
Duration of application of test voltage.......................15 seconds (min).
c.
Points of application of test voltage...........................All leads to case (bunch connection).
d.
Method of connection.............................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..............1,200 V/1.0 mA (min).
f.
Maximum leakage current........................................1.0 mA.
g.
Voltage ramp up time..............................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as
follows. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.
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