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MIL-PRF-19500-543 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/543N
TABLE I. Group A inspection.
Inspection 1/ 2/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
°C/W
Thermal impedance 3/
3161
See 4.3.4
ZθJX
Breakdown voltage, drain
3407
VGS = 0; ID = 1 mA dc,
V(BR)DSS
to source
bias condition C
2N6764
100
V dc
2N6766
200
V dc
2N6768
400
V dc
2N6770
500
V dc
VDS ≥ VGS;
Gate to source voltage
3404
2.0
4.0
V dc
VGS(th)1
(threshold)
ID = 0.25 mA dc
Gate current
3411
+100
nA dc
VGS = +20 V dc, bias condition C,
IGSSF1
VDS = 0
Gate current
3411
-100
nA dc
VGS = -20 V dc, bias condition C,
IGSSR1
VDS = 0
µA dc
Drain current
3413
25
VGS = 0; VDS = 80 percent of rated V
IDSS1
DS, bias condition C
Static drain to source
3421
VGS = 10 V dc, pulsed (see 4.5.1),
rDS(on)1
on-state resistance
condition A, ID = rated ID2 (see 1.3),
TC = +25° C.
Ω
2N6764
0.055
Ω
2N6766
0.085
Ω
2N6768
0.3
Ω
2N6770
0.4
Static drain to source
3421
VGS = 10 V dc, pulsed (see 4.5.1),
rDS(on)2
on-state resistance
condition A, ID = rated ID1 (see 1.3)
Ω
2N6764
0.065
Ω
2N6766
0.09
Ω
2N6768
0.4
Ω
2N6770
0.5
Forward voltage (source-
4011
Pulsed (see 4.5.1)
VSD
drain diode)
VGS = 0 V, ID = ID1
2N6764
1.9
V dc
2N6766
1.9
V dc
2N6768
1.7
V dc
2N6770
1.7
V dc
See footnotes at end of table.
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