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MIL-PRF-19500-543 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/543N
1.3 Maximum ratings - Continued.
Max rDS(on); (6)
Type
IDM
EAS
EAR
IAR
VISO
TSTG
VGS = 10 V dc, ID = ID2
70,000 ft.
and
(5)
(5)
TJ = +25°C
TJ = +150°C
attitude
TJ
°C
Ω
Ω
A pk
A
mJ
mJ
2N6764, 2N6764T1
152
150
-55
0.055
0.105
15
38.0
2N6766, 2N6766T1
120
500
to
0.085
0.170
15
30.0
2N6768, 2N6768T1
56
700
400
+150
0.300
0.750
15
14.0
2N6770, 2N6770T1
48
750
500
0.400
1.000
15
12.0
(1) Derate linearly 1.2 W/°C for TC > +25°C.
(2) See figure 6, thermal impedance curves.
(3) The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal
wires:
T  JM - T  C
ID=
( RθJC
) x ( RDS ( on ) at T  JM
)
See figure 7, maximum drain current graphs.
(4)
(5)
IDM = 4 x ID1 as calculated in note 2.
Pulsed (see 4.5.1).
(6)
1.4 Primary electrical characteristics at TC = +25°C.
Type
Min V(BR)DSS
VGS(TH)1
Max IDSS1
VDS ≥ VGS
VGS = 0
VGS = 0
VDS = 80 percent of rated VDS
ID = 0.25 mA dc
ID = 1.0mA
dc
V dc
µA dc
V dc
Min
Max
2N6764, 2N6764T1
100
2.0
4.0
25
2N6766, 2N6766T1
200
2.0
4.0
25
2N6768, 2N6768T1
400
2.0
4.0
25
2N6770, 2N6770T1
500
2.0
4.0
25
(1) Pulsed (see 4.5.1).
2



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