MIL-PRF-19500-543 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/543N

2N6768 and 2N6770

Dimensions - 2N6768 and 2N6770

Ltr

Inches

Millimeters

Min

Max

Min

Max

.247

.253

6.27

6.43

.287

.293

7.29

7.44

.033

.037

.84

.94

.016

.020

.41

.51

.017

.021

.43

.53

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

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3. Unless otherwise specified, tolerance is ฀ .005 inch (0.13 mm).

4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and

the back contact is the drain. The top metal is aluminum.

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5. Die thickness is .018 inch (0.46 mm) ฀001 inch (0.025 mm).

FIGURE 5 . JANHCB and JANKCB (B-version) die dimensions for 2N6768 and 2N6770.