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MIL-PRF-19500-543 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/543N
*  4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I shall not be acceptable.
Screen (see table E-IV
Measurement
(1) (2)
JANS
JANTX and JANTXV
(3)
Gate stress test (see 4.3.2).
Gate stress test (see 4.3.2).
(3) (4)
Method 3470 of MIL-STD-750, EAS test
Method 3470 of MIL-STD-750, EAS test
(see 4.3.3).
(see 4.3.3).
(3) 3c
Method 3161 of MIL-STD-750, thermal
Method 3161 of MIL-STD-750, thermal
impedance (see 4.3.4).
impedance (see 4.3.4).
9
IGSSF1, IGSSR1, IDSS1.
Not applicable.
10
Method 1042 of MIL-STD-750,
Method 1042 of MIL-STD-750,
test condition B.
test condition B.
11
IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1, of
IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1, of
subgroup 2 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = +20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIGSSR1 = -20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
12
Method 1042 of MIL-STD-750,
Method 1042 of MIL-STD-750,
test condition A.
test condition A.
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆIGSSF1 = +20 nA dc or ±100 percent of
ĆIGSSF1 = +20 nA dc or ±100 percent of initial
value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = -20 nA dc or ±100 percent of
ĆIGSSR1 = -20 nA dc or ±100 percent of initial
value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
ĆIDSS1 = ±25 µA dc or ±100 percent of
value, whichever is greater.
initial value, whichever is greater.
ĆrDS(ON)1 = ±20 percent of initial value.
ĆrDS(ON)1 = ±20 percent of initial value.
ĆVGS(TH)1 = ±20 percent of initial value.
ĆVGS(TH)1 = ±20 percent of initial value.
17
For TO-254AA packages: Method 1081 of
For TO-254AA packages: Method 1081
*
MIL-STD-750 (see 4.3.5), Endpoints:
of MIL-STD-750 (see 4.3.5), Endpoints:
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(1)
An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(2)
(3)
Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need
to be repeated in screening requirements.
(4)
This test method in no way implies a repetitive avalanche energy rating.
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