MIL-PRF-19500-543 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Avalanche, Types 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, And 2N6770T1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\).

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MIL-PRF-19500/543N

TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

Sample

plan

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition G, 500 cycles

Temperature cycling

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2

Subgroup 2 1/

45 devices

c=0

Steady-state reverse bias

1042

Condition A; 1,000 hours

Electrical measurements

See table I, subgroup 2

Steady-state gate bias

1042

Condition B, 1,000 hours

Electrical measurements

See table I, subgroup 2

Subgroup 4

Sample size

N/A

Thermal impedance curves

Subgroup 5

15 devices

c=0

Barometric pressure (reduced)

1001

Test condition C; I(ISO) = .25 mA (max),

400 V and 500 V devices only

V(ISO) = VDS

See footnotes at end of table.