For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-562 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 And 2N6806 Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
MIL-PRF-19500/562E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
± 200
Bias condition C, VDS = 0 V,
nA dc
Gate reverse current
3411
IGSS2
VGS = +20 V dc and -20 V dc
Bias condition C, VGS = 0 V,
-0.25
mA dc
Drain current
3413
IDSS2
VDS = 80 percent rated VDS
VDS ≥ VGS; ID = -0.25 mA
VGS(th)2
-1.0
V dc
Gate to source voltage
3403
(threshold)
Ω
rDS(on)3
VGS = -10 V dc, pulsed (see
Static drain to source on-
3421
4.5.1)
state resistance
0.55
ID = -7 A dc
1.60
2N6804
ID = -4 A dc
2N6806
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS; ID = -0.25 mA
Gate to source voltage
3403
VGS(th)3
-5.0
V dc
(threshold)
Subgroup 4
ID = rated ID2 (see 1.3);
Switching time test
3472
VGS = -10 V dc; Rg = 7.5 ohms
Turn-on delay time
td(on)
ns
VDD = -35 V dc
2N6804
60
2N6806
VDD = -63 V dc
50
Rise time
tr
ns
VDD = -35 V dc
VDD = -63 V dc
2N6804
140
2N6806
100
See footnote at end of table.
13



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.