MIL-PRF-19500-562 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 And 2N6806 Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/562E

Ltr

Dimensions

Inches

Millimeters

Min

Max

Min

Max

.172

.186

4.37

4.72

.106

.120

2.69

3.05

.021

.029

0.53

0.74

.035

.043

0.89

1.09

.014

.022

0.36

0.56

.025

.036

0.64

0.91

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics of the die are:

Back metals are chromium, nickel, and silver.

Top metal is aluminum

Back contact is the drain.

The die thickness is .0187 inch (0.474 mm), the tolerance is �.0050 inch (0.13 mm).

Unless otherwise specified, tolerance is �.0005 inch (0.13 mm).

FIGURE 2. JANHCA and JANKCA die dimensions for 2N6804.