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MIL-PRF-19500-562 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 And 2N6806 Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/562E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 ­ Continued
Turn-off delay time
td(off)
ns
VDD = -35 V dc
2N6804
140
2N6806
VDD = -63 V dc
100
Fall time
tf
ns
VDD = -35 V dc
140
VDD = -63 V dc
2N6804
80
2N6806
Subgroup 5
Single pulse unclamped
3470
See 4.3.4, 116 devices, c = 0
inductive switching 3/
Electrical measurements
See table I, subgroup 2 herein.
Safe operating area test
3474
VDS = 80 percent of rated VDS;
VDS ≤ 200 V maximum, tp = 10
ms (see figure 7).
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
Test 1
On-state gate charge
Qg(on)
nC
2N6804
29.0
2N6806
31.0
Test 2
Gate to source charge
Qgs
2N6804
7.1
2N6806
7.0
See footnote at end of table.
14



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