MIL-PRF-19500-562 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 And 2N6806 Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/562E

Dimensions - 2N6804

Ltr

Inches

Millimeters

Min

Max

Min

Max

.181

.185

4.60

4.70

.116

.120

2.95

3.05

.032

.034

.81

.86

.017

.019

.43

.48

.024

.026

.61

.66

.035

.037

.89

.94

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified, tolerance is �.005 inch (0.13 mm).

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4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and

the back contact is the drain. The top metal is aluminum.

5. Die thickness is .015 inch (0.38 mm) �.001 inch (0.025 mm).

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* FIGURE 4 . JANHCB and JANKCB (B-version) die dimensions for 2N6804.