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MIL-PRF-19500-562 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 And 2N6806 Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/562E
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
.173
.187
4.39
4.75
B
.108
.124
2.74
3.15
C
.022
.030
0.56
0.76
D
.030
.038
0.76
0.97
E
.012
.020
0.30
0.51
F
.021
.029
0.53
0.74
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  The physical characteristics of the die are:
Back metals are chromium, nickel, and silver.
Top metal is aluminum
Back contact is the drain.
The die thickness is .0187 inch (0.474 mm), the tolerance is ± .0050 inch (0.13 mm).
4.
Unless otherwise specified, tolerance is ± .0005 inch (0.13 mm).
5.
FIGURE 3. JANHCA and JANKCA die dimensions for 2N6806.
5



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