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MIL-PRF-19500-563 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6845, 2N6845U, 2N6847, And 2N6847U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/563G

* TABLE I. Group A inspection.

Inspection

MIL-STD-750

Limits

Symbol

Unit

Method

Condition

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

�C/W

Thermal impedance 2/

3161

See 4.3.4

ZθJC

Breakdown voltage,

3407

Bias condition C, VGS = 0V,

V(BR)DSS

drain to source

ID = -1 mA dc

2N6845, 2N6845U

-100

V dc

2N6847, 2N6847U

-200

V dc

VDS ≥ VGS, ID = -0.25 mA

Gate to source voltage

3403

VGS(th)1

-2.0

-4.0

V dc

(threshold)

Bias condition C, VGS = �20 V dc

�100

Gate current

3411

IGSS1

nA dc

VDS = 0 V dc

�A dc

Drain current

3413

Bias condition C, VGS = 0 V dc,

IDSS1

-25

VDS = 80 percent of rated VDS

Static drain to source

3421

VGS = -10 V dc, condition A,

rDS(on)1

on-state resistance

pulsed (see 4.5.1), ID = rated ID2

(see 1.3)

Ω

2N6845, 2N6845U

0.60

ID = -2.60 A dc

Ω

2N6847, 2N6847U

1.50

ID = -1.60 A dc

Static drain to source

3421

VGS = -10 V dc, condition A,

rDS(on)2

on-state resistance

pulsed (see 4.5.1), ID = rated ID1,

(see 1.3)

Ω

2N6845, 2N6845U

0.65

ID = -4.0 A dc

Ω

2N6847, 2N6847U

1.52

ID = -2.5 A dc

Forward voltage

4011

VGS = 0 V dc, ID = rated ID1, pulsed

VSD

(see 4.5.1)

2N6845, 2N6845U

-4.8

IS = -4.0 A dc

2N6847, 2N6847U

-4.8

IS = -2.5 A dc

See footnote at end of table.