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MIL-PRF-19500-563 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6845, 2N6845U, 2N6847, And 2N6847U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/563G
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Condition
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
Bias condition C, VGS = ±20 V dc,
±200
Gate current
3411
IGSS2
nA dc
VDS = 0 V dc,
Drain current
3413
Bias condition C, VGS = 0 V dc,
IDSS2
-0.25
mA dc
VDS = 80 percent of rated VDS
VDS ≥ VGS, ID = -.25 mA
Gate to source voltage
3403
VGS(th)2
-1.0
V dc
(threshold)
Static drain to source
3421
VGS = -10 V dc, pulsed (see 4.5.1),
rDS(on)3
on-state resistance
ID = rated ID2
Ω
2N6845, 2N6845U
1.08
ID = -2.60 A dc
Ω
2N6847, 2N6847U
2.94
ID = -1.60 A dc
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS, ID = -.25 mA
Gate to source voltage
3403
VGS(th)3
-5.0
V dc
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID1; VGS = -10 V dc;
Gate drive impedance = 7.5 Ω;
Turn-on delay time
td(on)
ns
2N6845, 2N6845U
60
ns
VDD = -40 V dc
2N6847, 2N6847U
50
ns
VDD = -75 V dc
Rise time
tr
ns
2N6845, 2N6845U
100
ns
VDD = -40 V dc
2N6847, 2N6847U
70
ns
VDD = -75 V dc
Turn-off delay time
td(off)
2N6845, 2N6845U
50
ns
VDD = -40 V dc
2N6847, 2N6847U
40
ns
VDD = -75 V dc
Fall time
tf
2N6845, 2N6845U
70
ns
VDD = -40 V dc
2N6847, 2N6847U
50
ns
VDD = -75 V dc
See footnotes at end of table.
13



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