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MIL-PRF-19500-563 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6845, 2N6845U, 2N6847, And 2N6847U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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. . . . . . . . . . .
MIL-PRF-19500/563G
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a
minimum, die shall be 100-percent probed in accordance with table I, subgroup 2.
4.3.2 Gate stress test. Apply VGS = ±30 V minimum for t = 250 µs minimum.
4.3.3 Unclamped inductive switching.
a. Peak current (ID) ..............................................rated ID1.
b. Peak gate voltage (VGS)...................................-10 V.
c. Gate to source resistor (RGS) ...........................25°C ≤ RGS ≤ 200°C.
d. Initial case temperature (TC) ............................+25°C, +10°C, -5°C.
e. Inductance (L) ..................................................100 µH ±10 percent.
f.
Number of pulses to be applied .......................1 pulse minimum.
g. Pulse repetition rate .........................................None.
* 4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 herein.
* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.
Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.
* 4.4.2.1 Group B inspection table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
1051
Test condition G.
B4
1042
Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.
Accelerated steady-state operation life; test condition A; VDS = rated TA = +175°C,
B5
1042
t = 120 hours. Read and record V(BR)DSS (pre and post at 1 mA = ID. Read and record
IDSS (pre and post). Deltas for V(BR)DSS shall not exceed 10 percent and IDSS shall not
exceed +25°A.
Accelerated steady-state gate stress; condition B, VGS = rated, TA = +175°C,
t = 24 hours.
*
B5
2037
Bond strength; test condition D.
Thermal resistance, see 4.3.4, RθJC(max) = 2.69°C/W.
*
B6
3161
10



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