MIL-PRF-19500-563 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6845, 2N6845U, 2N6847, And 2N6847U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/563G

* 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

Method

Condition

1051

Test condition G, 25 cycles.

1042

Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.

2037

Test condition D. All internal bond wires for each device shall be pulled separately.

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in

accordance with the inspections of table I, subgroup 2 herein.

Subgroup

Method

Condition

2036

Test condition E (not required for LCC).

Thermal resistance, see 4.3.4, RθJC(max) = 2.69�C/W.

3161

1042

Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.