MIL-PRF-19500-563 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6845, 2N6845U, 2N6847, And 2N6847U, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/563G

* TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.

Inspection

Qualification

MIL-STD-750

inspection

Method

Conditions

12 devices

Subgroup 1

c=0

1051

Condition G, 500 cycles

Temperature cycling

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2

Subgroup 2 2/

45 devices

c=0

Steady-state reverse bias

1042

Condition A, 1,000 hours

Electrical measurements

See table I, subgroup 2

Steady-state gate bias

1042

Condition B, 1,000 hours

Electrical measurements

See table I, subgroup 2

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 5

Not applicable

Subgroup 10

Commutating diode for safe

3476

22 devices

operating area test

c=0

procedure for measuring

dv/dt during reverse

recovery of power MOSFET

transistors or insulated gate

bipolar transistors

1/ JANHC and JANKC devices are qualified in accordance with MIL-PRF-19500.

2/ A separate sample may be pulled for each test.