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MIL-PRF-19500-565 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6895, 2N6896, 2N6897, And 2N6898, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/565E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued.
tr
VDD = -50 V dc
Rise time
2N6895
ID = - 0.74 A dc
45
ns
2N6896
ID = - 3.8 A dc
100
ns
2N6897
ID = - 7.6 A dc
175
ns
2N6898
ID = - 15.8 A dc
250
ns
Turn-off delay time
VDD = -50 V dc
td(off)
2N6895
ID = - 0.74 A dc
45
ns
2N6896
ID = - 3.8 A dc
150
ns
2N6897
ID = - 7.6 A dc
275
ns
2N6898
ID = - 15.8 A dc
400
ns
Fall time
VDD = -50 V dc
tf
2N6895
ID = - 0.74 A dc
50
ns
2N6896
ID = - 3.8 A dc
100
ns
2N6897
ID = - 7.6 A dc
175
ns
2N6898
ID = - 15.8 A dc
250
ns
Subgroup 5
See figure 4.
3474
Safe operating area
VDS = 80 percent of rated V
High voltage test
DS (see
1.3)
Electrical measurements
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Condition A or B
3471
Gate charge
Test 1
Qg(on)
On-state gate charge
2N6895
ID = - 0.74 A dc
2.2
4.7
nC
2N6896
ID = - 3.8 A dc
13
24
nC
2N6897
ID = - 7.6 A dc
31
58
nC
2N6898
ID = - 15.8 A dc
50
117
nC
See footnotes at end of table.
12



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