MIL-PRF-19500/565E
* TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.
Inspection
MIL-STD-750
Sample
Plan
Method
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
1051
Test condition G.
Hermetic seal
1071
Fine leak
Test conditions G or H
Gross leak
Test conditions C or D
Electrical measurements
See table I, subgroup 2.
Subgroup 2 1/
45 devices
c=0
Steady-state gate bias
1042
Condition B, 1,000 hours.
Electrical measurements
See table I, subgroup 2.
Steady-state reverse bias
1042
Condition A, 1,000 hours.
Electrical measurements
See table I, subgroup 2.
Subgroup 4
Sample size
N/A
Thermal impedance curves
See MIL-PRF-19500.
Subgroup 6
3 devices
ESD
1020
Not required for devices classified as ESD class 1.
Subgroup 10
22 devices
c=0
3476
Test conditions shall be derived by the manufacturer
Commutating diode for safe
operating area test procedure
for measuring dv/dt during
reverse recovery of power
MOSFET transistors or insulated
gate bipolar transistors
1/ A separate sample may be pulled for each test condition.
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