MIL-PRF-19500/565E
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
nC - nano Coulomb
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1, TO-205AF (formerly TO-39) for 2N6895, and figure 2, TO-204AA for 2N6896 and
2N6897; and TO-204AE for 2N6898 (formerly TO-3).
3.4.1 Lead material and finish. Lead material shall be Kovar, Alloy 52 for TO-205AF, and a copper core or plated
core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Internal construction. Multiple chip construction shall not be permitted.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static charge. The following handling practices shall be followed:
a.
Devices shall be handled on benches with conductive handling devices.
b.
Ground test equipment, tools, and personnel handling devices.
c.
Do not handle devices by the leads.
d.
Store devices in conductive foam or carriers.
e.
Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent if practical.
g.
Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to
any lead.
Gate must be terminated to source, R ≤ 100 kΩ, whenever bias voltage is to be applied drain to source.
h.
3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of
country of origin may be omitted from the body of the transistor, but shall be retained on the initial container.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
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