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MIL-PRF-19500-565 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6895, 2N6896, 2N6897, And 2N6898, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/565E
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Conditions
Min
Max
Method
Subgroup 7 - Continued.
Test 2
Qgs
Gate to source charge
2N6895
0.4
1.2
nC
2N6896
1.1
5.5
nC
2N6897
3
13
nC
2N6898
6
25
nC
Test 3
Qgd
Gate to drain charge
2N6895
0.9
2.9
nC
2N6896
5.5
14.5
nC
2N6897
14
36
nC
2N6898
26
69
nC
VDD = ≤ 30 V; di/dt =100A/μs
Reverse recovery time
3473
trr
IF = 4 A
2N6895
340
ns
2N6896
375
ns
2N6897
500
ns
2N6898
750
ns
1/
For sampling plan, see MIL-PRF-19500.
2/
This test required for the following end-point measurements only:
Group B, subgroups 2 and 3 (JANTXV).
Group B, subgroups 3 and 4 (JANS).
Group C, subgroup 2 and 6.
Group E, subgroup 1.
13



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