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MIL-PRF-19500-570 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon Logic-Level, Types 2N6901 And 2N6903, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a logic-level N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are also provided for each unencapsulated device type. See 6.4 or JANHC and JANKC die versions.

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MIL-PRF-19500/570E

TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

�C /W

Thermal impedance 2/

3161

See 4.3.4

ZθJC

Breakdown voltage drain

3407

ID = 1.0 mA dc,

V(BR)DSS

to source

bias condition C, VGS = 0

2N6901

V dc

100

2N6903

200

V dc

VDS ≥ VGS, ID = 1.0 mA dc

Gate to source voltage

3403

1.0

2.0

V dc

VGS(th)1

(threshold)

Gate current

3411

+100

nA dc

VGS = +10 V dc, bias

IGSSF1

condition C, VDS = 0

Gate current

3411

-100

nA dc

IGSSR1

VGS = -10 V dc, bias condition

C, VDS = 0

Drain current

3413

Bias condition C, VGS = 0

IDSS1

�A dc

2N6901

1.0

VDS = 80 V dc

�A dc

2N6903

1.0

VDS = 160 V dc

Static drain to source

3421

VGS = 5 V dc, bias condition

rDS(on)1

on-state resistance

A, pulsed (see 4.5.1)

Ω

2N6901

1.4

ID = 1.07 A dc

Ω

2N6903

3.65

ID = 0.62 A dc

Drain to source on-state

3405

VDS(on)

VGS = 5 V dc, bias condition

voltage

A, pulsed (see 4.5.1)

2N6901

ID = 1.69 A dc

2N6903

2.4

ID = 0.98 A dc

6.0

Forward voltage (source

4011

0.8

1.6

Pulsed (see 4.5.1), VGS = 0

VSD

drain diode)

2N6901

IS = 1.69 A dc

2N6903

IS = .98 A dc

Forward

3475

0.5

2.0

ID = rated ID2 (see 1.3),

gFS

transconductance

pulsed (see 4.5.1)

See footnote at end of table.