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MIL-PRF-19500-570 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon Logic-Level, Types 2N6901 And 2N6903, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a logic-level N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are also provided for each unencapsulated device type. See 6.4 or JANHC and JANKC die versions.

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MIL-PRF-19500/570E
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature
operation:
Gate to source voltage
3403
0.5
V dc
VDS > VGS, ID = 1.0 mA dc
VGS(th)2
(threshold)
±200
Gate current
3411
nA dc
VGS = +10 V dc and -10 V dc;
IGSS2
VDS = 0; bias condition C
µA dc
Drain current
3413
50
Bias condition C, VGS = 0 V
IDSS2
2N6901
VDS = 80 V dc
2N6903
VDS = 160 V dc
Static drain to source
3421
VGS = 5 V dc, pulsed (see
rDS(on)2
on-state resistance
4.5.1)
Ω
2N6901
2.6
ID = 1.07 A dc
Ω
2N6903
7.7
ID = 0.62 A dc
TC = TJ = -55°C
Low temperature
operation:
VDS ≥ VGS; ID = 1.0 mA dc
Gate to source voltage
3403
3.0
V dc
VGS(th)3
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID2, (see 1.3);
VGS = 5 V dc, gate drive
impedance = 25 Ω
Turn-on delay time
25
ns
td(on)
2N6901
VDD = 50 V dc
2N6903
VDD = 100 V dc
Rise time
80
ns
tr
2N6901
VDD = 50 V dc
2N6903
VDD = 100 V dc
See footnote at end of table.
12



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