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MIL-PRF-19500-599 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance for each unencapsulated device type die \(element evaluation\) as specified in MIL?√PRF?√19500.

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. . . . . . .
The documentation and process conversion
INCH­POUND
measures necessary to comply with this revision
MIL­PRF­19500/599E
shall be completed by 28 July 2014.
29 January 2014
SUPERSEDING
MIL­PRF­19500/599D
31 October 2003
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT,
P-CHANNEL, SILICON, TYPE 2N7335,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL­PRF­19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for quad P-channel, enhancement-mode,
MOSFET, power transistor with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). Four
levels of product assurance are provided for each encapsulated device type as specified in MIL­PRF­19500. Two
levels of product assurance for each unencapsulated device type die (element evaluation) as specified in
1.2 Physical dimensions. The device package styles are as follows: 14 pin dual-in line package (MO­036AB) in
accordance with figure 1 and unencapsulated die in accordance with figure 2 for device types JANHC and JANKC.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
PT (1)
EAR
EAS
ID2 (2)
IS
VGS
ID1 (2) (3)
TC = +25°C (free air)
TC = +25°C
TC = +100°C
(1 die)
(4 die)
W
W
V dc
A dc
A dc
A dc
mJ
mJ
1.4
2.5
±20
­.75
­.50
­.75
75
.14
IAR
IDM
Max rDS(on) (1)
RθJA1
RθJA2
RθJC
RθJC
TJ and TSTG
(2)
(4)
VGS = 10 V dc, ID = ID2
maximum
maximum
maximum
maximum
TJ = +25°C
TJ = +150°C
(1 die)
(4 die)
(1 die)
(4 die)
°C
Ω
Ω
°C/W
°C/W
°C/W
°C/W
A
A(pk)
­.75
­3.0
­55 to +150
1.4
2.5
90
50
17
See footnotes on next page.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961



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