MIL-PRF-19500-599 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance for each unencapsulated device type die \(element evaluation\) as specified in MIL?√PRF?√19500.

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MIL�PRF�19500/599E

TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only. 1/

MIL�STD�750

Inspection

Sample plan

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

Condition G, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2.

Subgroup 2 2/

45 devices

c=0

Steady-state reverse bias

1042

Condition A, 1,000 hours.

Electrical measurements

See table I, subgroup 2.

Steady-state gate bias

1042

Condition B, 1,000 hours

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Sample size N/A

Thermal impedance curves

See MIL�PRF�19500.

Subgroup 5

Not applicable

Subgroup 6

11 devices

Electrostatic discharge

1020

sensitivity

Subgroup 11

22 devices

c=0

Test procedure for measuring

3476

dv/dt during reverse recovery

of power MOSFET transistors

JANHC and JANKC devices are qualified in accordance with appendix G of MIL�PRF�19500.

A separate sample for each test may be selected.