MIL-PRF-19500-599 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance for each unencapsulated device type die \(element evaluation\) as specified in MIL?√PRF?√19500.

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MIL�PRF�19500/599E

4.4.2.1 Quality level JANS (table E�VIA of MIL�PRF�19500).

Subgroup

Method

Conditions

1051

Condition G.

Gate stress; condition B, TA = +175�C, t = 24 hours.

1042

Reverse bias; condition A, TA = +175�C, t = 120 hours. Read and record VBR(DSS)

1042

(pre and post) at ID = 1 mA.

3161

4.4.2.2 Quality levels JAN, JANTX, and JANTXV (table E�VIB of MIL�PRF�19500).

Subgroup

Method

Conditions

1051

Condition G.

1042

Condition D, the heating cycle shall be 1 minute minimum.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E�VII of MIL�PRF�19500 and as follows herein. Electrical measurements (end-points) shall

be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable steps

of table II herein.

Subgroup

Method

Conditions

2036

Condition E. The sampling plan applies to the number of leads tested. A minimum

of three devices shall be tested.

3161

1042

Condition D, the heating cycle shall be 1 minute minimum.