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MIL-PRF-19500-599 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance for each unencapsulated device type die \(element evaluation\) as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/599E
TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Unit
Symbol
Max
Min
Method
Conditions
Subgroup 3 ­ Continued
VDS ≥ VGS, ID = ­0.25 mA
Gate-to-source voltage
3403
VGS(th)2
­1.0
V dc
(threshold)
TC = TJ = ­55°C
Low temperature operation:
VDS ≥ VGS, ID = ­0.25 mA
Gate-to-source voltage
3403
VGS(th)3
-5.0
V dc
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID1; VGS = ­10 V dc;
RG = 7.5 Ω;
VDD = 50 percent of V(BR)DSS
Turn-on delay time
td(on)
30
ns
Rise time
tr
60
ns
Turn-off delay time
td(off)
70
ns
Fall time
tf
80
ns
Subgroup 5
Single pulse unclamped
3470
See 4.3.1.2, n = 116, c = 0
EAS
inductive switching 3/
Electrical measurements
See subgroup 2 of this table
Safe operating area test
3474
VDS = 80 percent of rated V(BR)DSS,
for power MOSFETs
ID = 0.5 A, tp = 10 ms,
Electrical measurements
See subgroup 2 of this table
Subgroup 6
Not applicable
See footnote at end of table.
12



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