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MIL-PRF-19500-599 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance for each unencapsulated device type die \(element evaluation\) as specified in MIL?√PRF?√19500.

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MIL�PRF�19500/599E
4.3 Screening.
4.3.1 Screening of packaged devices (quality levels JANS, JANTX and JANTXV only). Screening of packaged
devices shall be in accordance with table E�IV of MIL�PRF�19500 and as specified herein. The following
measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall
not be acceptable.
Screen
Measurement (1) (2)
(see table E�IV of
JANS level
JANTX and JANTXV levels
(3)
Gate stress test (see 4.3.1.1)
Gate stress test (see 4.3.1.1)
(3) (4)
Method 3470 of MIL�STD�750, (see 4.3.1.2)
Method 3470 of MIL�STD�750, (see 4.3.1.2)
optional
optional
3c (3)
Method 3161 of MIL�STD�750, (see 4.3.1.3)
Method 3161 of MIL�STD�750, (see 4.3.1.3)
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IGSSF1, IGSSR1, IDSS1, see table I, subgroup 2
See table I, subgroup 2 herein
herein
Method 1042 of MIL�STD�750,
Method 1042 of MIL�STD�750,
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test condition B
test condition B
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1,
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VGS(th)1, table I, subgroup 2 herein
Subgroup 2 of table I herein;
ĆIGSSF1 = �20 nA dc or �100 percent of
initial value, whichever is greater.
ĆIGSSR1 = �20 nA dc or �100 percent of
initial value, whichever is greater.
ĆIDSS1 = �25 �A dc or �100 percent of
initial value, whichever is greater
Method 1042 of MIL�STD�750,
Method 1042 of MIL�STD�750,
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test condition A, t = 240 hours
test condition A
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
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ĆIGSSF1 = �20 nA dc or �100 percent of
ĆIGSSF1 = �20 nA dc or �100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = �20 nA dc or �100 percent of
ĆIGSSR1 = �20 nA dc or �100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = �25 �A dc or �100 percent of
ĆIDSS1 = �25 �A dc or �100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 = �20 percent of initial value
ĆrDS(on)1 = �20 percent of initial value
ĆVGS(th)1 = �20 percent of initial value
ĆVGS(th)1 = �20 percent of initial value
(1)  At the end of the test program, IGSSF1, IGSSR1 and IDSS1 are measured.
(2)  An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(3)  Shall be performed anytime before screen 9.
(4) This test method in no way implies a repetitive single pulse avalanche energy rating. This test need not be
performed in group A when performed as a screen.
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