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MIL-PRF-19500-599 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel, Silicon, Type 2N7335, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad P-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance for each unencapsulated device type die \(element evaluation\) as specified in MIL?√PRF?√19500.

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MIL�PRF�19500/599E
TABLE I. Group A inspection � Continued.
Limit
Inspection 1/
Unit
Symbol
Max
Min
Method
Conditions
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
Qg(on)
15
nC
Gate to source charge
Qgs
7.0
nC
Gate to drain charge
Qgd
8.0
nC
Condition A, di/dt ≤ �100 A/�s, VDD
Reverse recovery time
3473
trr
200
ns
≤ �30 V, ID = ID1, (see 1.3)
1/
For sampling plan, see MIL�PRF�19500.
2/
This test is required for the following end-point measurement only (not intended for screen 9, 11, or 13):
JANS, table E�VIA of MIL�PRF�19500, group B, subgroups 3 and 4; JAN, JANTX, and JANTXV, table E�VIB
of MIL�PRF�19500, group B, subgroups 2 and 3; and table E�VII of MIL�PRF�19500, group C, subgroup 6,
and table E�IX of MIL�PRF�19500, group E, subgroups 1 and 2.
3/
This test need not be performed in group A if performed in screening.
TABLE II. Groups A, B and C delta measurements. 1/
Step
Inspection
Symbol
Limits
Unit
Method
Conditions
ĆV(BR)DSS
VGS = 0 V dc, ID = -1 mA dc
1
Breakdown voltage
�10 percent
3407
drain to source
test condition C
ĆIDSS1
ĆIDSS1 = �25 �A dc
2
Drain current
3413
Bias condition C, VGS = 0 V dc,
VDS = 80 percent of rated VDS;
or �100 percent of
initial value,
whichever is
greater.
1/
The delta measurements for group B, product assurance level JANS shall be as follows: In addition to the
measurements specified for subgroup 5 of table E�VIA of MIL�PRF�19500, the measurements of steps 1 and 2
shall also be taken.
13



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