MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K

4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

1051

Test condition G, 100 cycles.

2075

See 3.4.2 herein.

2077

Scanning electron microscope (SEM) qualification may be performed

anytime prior to lot formation.

2037

Test condition A, all internal wires for each device shall be pulled

separately.

1042

Condition D, 2,000 cycles. No heat sink nor forced-air cooling on the

device shall be permitted during the on cycle. The heating cycle shall be

30 seconds minimum.

Test condition A, VDS = rated TA = +175�C, t = 120 hours.

1042

Condition B, VGS = rated; TA = 175�C; t = 24 hours.

1042

2037

Bond strength; test condition D.

3161

Not applicable.

4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500.

Subgroup

Method

Condition

1051

Test condition G, 25 cycles.

1042

Test condition D, 2,000 cycles; The heating cycle shall be 30 seconds

minimum.

2075

See 3.4.2 herein.

B5 and B6

Not applicable.