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MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K

TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 3

TC = TJ = +125�C

High-temperature

operation:

� 200

Gate current

3411

VGS = +20 V dc and -20 V dc,

IGSS2

nA dc

bias condition C, VDS = 0

Drain current

3413

VGS = 0, bias condition C,

VDS = 100 percent of rated VDS

IDSS2

1.0

mA dc

VDS = 80 percent of rated VDS

IDSS3

0.25

mA dc

Static drain to source

3421

VGS = 12 V dc, pulsed (see 4.5.1),

rDS(on)3

on-state resistance

ID = ID2

2N7261, 2N7261U, 2N7261U5

0.350

ohm

2N7262, 2N7262U, 2N7262U5

0.6

ohm

VDS ≥ VGS, ID = 1 mA dc

Gate to source

3403

VGS(TH)2

1.0

V dc

voltage (thresholds)

TC = TJ = -55�C

Low-temperature

operation:

VDS ≥ VGS, ID = 1 mA dc

Gate to source

3403

VGS(TH)3

5.0

V dc

voltage (threshold)

Subgroup 4

ID = rated ID2, VDD = 15 V, pulsed

Forward transconductance

3475

gFS

(see 4.5.1)

2N7261, 2N7261U, 2N7261U5

2N7262, 2N7262U, 2N7262U5

2.5

Switching time test

3472

ID = ID1, VGS = 12 V dc,

RG = 2.35Ω, VDD = 50 percent

of rated VDS

Turn-on delay time

td(on)

2N7261, 2N7261U, 2N7261U5

2N7262, 2N7262U, 2N7262U5

See footnote at end of table.