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MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
inspection
Subgroup 2
°C/W
See 4.3.3
3161
Thermal impedance 2/
ZθJC
Breakdown voltage,
3407
VGS = 0, ID = 1 mA dc,
V(BR)DSS
drain to source
bias condition C
2N7261, 2N7261U, 2N7261U5
100
V dc
200
V dc
2N7262, 2N7262U, 2N7262U5
VDS ≥ VGS
Gate to source
3403
VGS(TH)1
2.0
4.0
V dc
voltage (threshold)
ID = 1 mA dc
Gate current
3411
VGS = +20 V dc, bias condition C, VDS
IGSSF1
+100
nA dc
=0
Gate current
3411
VGS = -20 V dc, bias condition C, VDS
IGSSR1
-100
nA dc
=0
µA dc
Drain current
3413
VGS = 0, bias condition C,
IDSS1
25
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = 12 V dc, condition A,
rDS(on)1
on-state resistance
pulsed (see 4.5.1), ID = ID2
0.180
ohm
2N7261, 2N7261U, 2N7261U5
0.350
ohm
2N7262, 2N7262U, 2N7262U5
Static drain to source
3421
VGS = 12 V dc, condition A,
rDS(on)2
on-state resistance
pulsed (see 4.5.1), ID = ID1
2N7261, 2N7261U, 2N7261U5
0.185
ohm
2N7262, 2N7262U, 2N7262U5
0.364
ohm
Forward voltage
4011
Pulsed (see 4.5.1), ID = ID1,
VSD
VGS = 0
2N7261, 2N7261U, 2N7261U5
1.5
V
2N7262, 2N7262U, 2N7262U5
1.4
V
See footnote at end of table.
12



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