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MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K

Ltr

Dimensions

Inches

Millimeters

Min

Max

Min

Max

.315

.355

8.00

9.01

.160

.180

4.07

4.57

.340

.370

8.64

9.40

.200 BSC

5.08 BSC

.016

.021

0.41

0.53

.500

.750

12.70

19.05

.016

.019

0.41

0.48

.050

1.27

.250

6.35

.070

1.78

.050

1.27

.010

0.25

.029

.045

0.74

1.14

.028

.034

0.71

0.86

45� BSC

Term 1

Source

Term 2

Gate

Term 3

Drain

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Lead number 1 is the source, lead number 2 is the gate, lead 3 is the drain and is electrically connected to the

case, lead number 4 is omitted from this outline.

4. Dimensions and tolerancing shall be in accordance with ASME Y14.5M.

FIGURE 1. Physical dimensions for TO-205AF (2N7261 and 2N7262).