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MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K
* 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with, table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
(1) (2)
JANS level
JANTXV levels
Gate stress test (see 4.3.1)
Gate stress test (see 4.3.1)
(3)
Method 3470 of MIL-STD-750, (see 4.3.2)
Method 3470 of MIL-STD-750, (see 4.3.2)
(3)
(3) 3c
Method 3161 of MIL-STD-750, (see 4.3.3)
Method 3161 of MIL-STD-750, (see 4.3.3)
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IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
Not applicable
herein
10
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition B
condition B
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IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1
Subgroup 2 of table I herein;
Subgroup 2 of table I herein
ĆIGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
ĆIDSS1 = ±10 µA dc or ±100 percent of
initial value, whichever is greater.
12
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition A
condition A
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Subgroups 2 and 3 of table I herein
Subgroup 2 of table I herein
ĆIGSSF1 = ±20 nA dc or ±100 percent of
ĆIGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of
ĆIGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = ±10 µA dc or ±100 percent of
ĆIDSS1 = ±10 µA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value.
ĆrDS(on)1 = ±20 percent of initial value.
ĆVGS(TH)1 = ±20 percent of initial value.
ĆVGS(TH)1 = ±20 percent of initial value.
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
* (3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV levels do not need to
be repeated in screening requirements.
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