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MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued.
Rise time
tr
2N7261, 2N7261U, 2N7261U5
32
ns
2N7262, 2N7262U, 2N7262U5
40
ns
Turn-off delay time
td(off)
2N7261, 2N7261U, 2N7261U5
40
ns
2N7262, 2N7262U, 2N7262U5
60
ns
Fall time
tf
2N7261, 2N7261U, 2N7261U5
40
ns
2N7262, 2N7262U, 2N7262U5
45
ns
Subgroup 5
Safe operating area
3474
See figure 5, tp = 10 ms
test (high voltage)
minimum, VDS = 80 percent of
maximum rated VDS, (VDS ≤ 200)
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
QG(on)
2N7261, 2N7261U, 2N7261U5
50
nC
2N7262, 2N7262U, 2N7262U5
50
nC
Gate to source charge
QGS
2N7261, 2N7261U, 2N7261U5
10
nC
2N7262, 2N7262U, 2N7262U5
10
nC
See footnote at end of table.
14



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