For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


img
.
MIL-PRF-19500/601K
TABLE II. Group D inspection.
Pre-irradiation limits
Post-irradiation limits
Inspection
Symbol
Unit
1/ 2/ 3/ 4/
Method
Conditions
R
F, G, and H 5/
R
F, G, and H 5/
Min
Max
Min
Max
Min
Max
Min
Max
Subgroup 1
Not applicable
TC = +25°C
Subgroup 2
1019
Steady-state
VGS = 12 V,
total dose
VDS = 0
irradiation
(VGS bias)
6/
Steady-state
1019
VGS = 0,
VDS = 80
total dose
percent of
irradiation
rated VDS
(VDS bias)
6/
(pre-
irradiation)
End-point
electrical
Breakdown
3407
VGS = 0,
VBRDSS
voltage,
ID = 1 mA,
drain to
bias condition
source
C
2N7261
100
100
100
100
V dc
2N7262
200
200
200
200
V dc
VDS ≥ VGS
Gate to source
3403
VGSth
voltage
ID = 1 mA
(threshold)
2N7261
2
4
2
4
2
4
1.25
4.50
V dc
2N7262
2
4
2
4
2
4
1.25
4.50
V dc
Gate current
3411
VGS = 20 V,
IGSSF1
100
100
100
100
nA dc
VDS = 0,
bias condition
C
Gate current
3411
VGS = -20 V,
IGSSR1
-100
-100
-100
-100
nA dc
VDS = 0,
bias condition
C
See footnotes at end of table.
16



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.