MIL-PRF-19500/601K
* TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.
Sample
Inspection
plan
Method
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
1051
Test condition G, 500 cycles
Hermetic seal
1071
Fine leak
Gross leak
See table I, subgroup 2
Electrical measurements
Subgroup 2 1/
45 devices
c=0
Steady-state gate bias
1042
Condition B, 1,000 hours
See table I, subgroup 2
Electrical measurements
Steady-state reverse bias
1042
Condition A, 1,000 hours
Electrical measurements
See table I, subgroup 2
Subgroup 4
Sample size
N/A
Thermal impedance curves
See MIL-PRF-19500.
Subgroup 5
Not applicable
Subgroup 10
22 devices
c=0
Commutating diode for safe
3476
Test conditions shall be derived by the
operating area test procedure
manufacturer
for measuring dv/dt during
reverse recovery of power
MOSFET transistors or
insulated gate bipolar
transistors
Subgroup 11
3 devices
SEE 2/ 3/
1080
See MIL-STD-750 method 1080.
1/ A separate sample for each test shall be pulled.
2/ Group E qualification of SEE effect testing may be performed prior to lot formation. Qualification may be
extended to other specification sheets utilizing the same structurally identical die design.
3/ Device qualification to a higher level LET is sufficient to qualify all lower level LETs.
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