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MIL-PRF-19500-601 Semiconductor Device, Field Effect Power Transistors, N-Channel, Silicon, Types 2N7261 And 2N7262 U And U5 Suffixes, Jantxv, And Radiation Hardened Type Suffixes, Jantxvr, F, G, And H And Jansr, F, G, And HThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/601K
Typical SEE Response
120
100
LET=28± 5%
Range=42.8µm± 5%
80
Energy=283.3MeV± 7.5%
60
40
LET=37± 5%
Range=39µm± 5%
Energy=305MeV± 5%
20
0
0
-5
-10
-15
-20
VGS Bias (Volts)
2N7261, 2N7261U, 2N7261U5
Typical SEE Response
200
180
160
LET=28± 5%
140
Range=42.8µm± 5%
Energy=283.3MeV± 7.5%
120
100
80
LET=37± 5%
60
Range=39µm± 5%
40
Energy=305MeV± 5%
20
0
0
-5
-10
-15
-20
VGS Bias (Volts)
2N7262, 2N7262U, 2N7262U5
* FIGURE 6. Typical single-event-effects safe-operating-area graphs.
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